LASER DIODES MADE FROM DISLOCATION-FREE GAAS SHOWING A HOMOGENEOUS NEAR-FIELD PATTERN

被引：4

作者：

HATZ, J

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1967年 / QE 3卷 / 11期

关键词：

D O I：

10.1109/JQE.1967.1074414

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：643 / &

共 8 条

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[5]

HATZ J, TO BE PUBLISHED

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[8] CRYSTAL MOSAIC STRUCTURES AND LASING PROPERTIES OF GAAS LASER DIODES [J].

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