GALLIUM ARSENIDE-PHOSPHIDE - CRYSTAL DIFFUSION AND LASER PROPERTIES

被引：35

作者：

NUESE, CJ

STILLMAN, GE

SIRKIS, MD

HOLONYAK, N

机构：

来源：

SOLID-STATE ELECTRONICS | 1966年 / 9卷 / 08期

关键词：

D O I：

10.1016/0038-1101(66)90115-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：735 / +

页数：1

相关论文

共 54 条

[1] ELECTRON-HOLE AND ELECTRON-IMPURITY BAND TUNNELING IN GAAS LUMINESCENT JUNCTIONS
ARCHER, RJ
LEITE, RC
YARIV, A
PORTO, SPS
WHELAN, JM
[J]. PHYSICAL REVIEW LETTERS, 1963, 10 (11) : 483 - &
[2] P-N JUNCTION LASERS
BURNS, G
NATHAN, MI
[J]. PROCEEDINGS OF THE IEEE, 1964, 52 (07) : 770 - +
[3] EFFECT OF TEMPERATURE ON PROPERTIES OF GAAS LASER
BURNS, G
DILL, FH
NATHAN, MI
[J]. PROCEEDINGS OF THE IEEE, 1963, 51 (06) : 947 - &
[4] PBSE DIODE LASER
BUTLER, JF
CALAWA, AR
PHELAN, RJ
STRAUSS, AJ
REDIKER, RH
[J]. SOLID STATE COMMUNICATIONS, 1964, 2 (10) : 303 - 304
[5] PBTE DIODE LASER ( LAMBDA 6.5 MU 12 DEGREES K E )
BUTLER, JF
REDIKER, RH
CALAWA, AR
HARMAN, TC
PHELAN, RJ
STRAUSS, AJ
[J]. APPLIED PHYSICS LETTERS, 1964, 5 (04) : 75 - &
[6] PBS DIODE LASER
BUTLER, JF
CALAWA, AR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (10) : 1056 - &
[7] DIFFUSION + SOLUBILITY OF ZINC IN GALLIUM PHOSPHIDE SINGLE CRYSTALS
CHANG, LL
PEARSON, GL
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 374 - &
[8] THE JUNCTION DEPTH OF CONCENTRATION-DEPENDENT DIFFUSION - ZINC IN III-V COMPOUNDS
CHANG, LL
[J]. SOLID-STATE ELECTRONICS, 1964, 7 (12) : 853 - 859
[9] DIFFUSION AND SOLUBILITY OF ZINC IN INDIUM PHOSPHIDE
CHANG, LL
CASEY, HC
[J]. SOLID-STATE ELECTRONICS, 1964, 7 (06) : 481 - &
[10] CLARK GW, TO BE PUBLISHED

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