GALLIUM ARSENIDE-PHOSPHIDE - CRYSTAL DIFFUSION AND LASER PROPERTIES

[21] HILSUM C, 1961, SEMICONDUCTING 3V CO, pCH2

[22] THE DIRECT-INDIRECT TRANSITION IN GA(AS1-XPX) P-N JUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1963, 3 (03) : 47 - 49

[23] EFFECT OF DONOR IMPURITIES ON DIRECT-INDIRECT TRANSITION IN GA(AS1-XPX) - (S SE AND TE DOPING - EFFECT ON JUNCTION LASER WAVELENGTH - E/T) [J]. APPLIED PHYSICS LETTERS, 1966, 8 (04) : 83 - &

[24] COHERENT (VISIBLE) LIGHT EMISSION FROM GA(AS1-XPX) JUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1962, 1 (04) : 82 - 83

[25] VAPOR-SOLID INTERFACE OF GA ( AS1-ALPHA P ALPHA ) SINGLE CRYSTALS GROWN BY HALOGEN-VAPOR TRANSPORT ) GROWTH VIA SCREW DISLOCATIONS E ) [J]. APPLIED PHYSICS LETTERS, 1964, 5 (01) : 19 - &

[26] HOLONYAK N, 1964, T METALL SOC AIME, V230, P276

[27] HOLONYAK N, 1961, MET SOC C, P49

[28] THE PREPARATION AND PROPERTIES OF VAPOR-GROWN GAAS-GAP ALLOYS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (09) : 991 - 995

[29] LEITE RCC, 1965, PHYS REV, V137, P1583

[30] RADIATIVE RECOMBINATION THROUGH IMPURITY LEVELS IN GAAS P-N JUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1963, 3 (05) : 71 - 72

[21] HILSUM C, 1961, SEMICONDUCTING 3V CO, pCH2

[22] THE DIRECT-INDIRECT TRANSITION IN GA(AS1-XPX) P-N JUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1963, 3 (03) : 47 - 49

[23] EFFECT OF DONOR IMPURITIES ON DIRECT-INDIRECT TRANSITION IN GA(AS1-XPX) - (S SE AND TE DOPING - EFFECT ON JUNCTION LASER WAVELENGTH - E/T) [J]. APPLIED PHYSICS LETTERS, 1966, 8 (04) : 83 - &

[24] COHERENT (VISIBLE) LIGHT EMISSION FROM GA(AS1-XPX) JUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1962, 1 (04) : 82 - 83

[25] VAPOR-SOLID INTERFACE OF GA ( AS1-ALPHA P ALPHA ) SINGLE CRYSTALS GROWN BY HALOGEN-VAPOR TRANSPORT ) GROWTH VIA SCREW DISLOCATIONS E ) [J]. APPLIED PHYSICS LETTERS, 1964, 5 (01) : 19 - &

[26] HOLONYAK N, 1964, T METALL SOC AIME, V230, P276

[27] HOLONYAK N, 1961, MET SOC C, P49

[28] THE PREPARATION AND PROPERTIES OF VAPOR-GROWN GAAS-GAP ALLOYS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (09) : 991 - 995

[29] LEITE RCC, 1965, PHYS REV, V137, P1583

[30] RADIATIVE RECOMBINATION THROUGH IMPURITY LEVELS IN GAAS P-N JUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1963, 3 (05) : 71 - 72