EFFECT OF DONOR IMPURITIES ON DIRECT-INDIRECT TRANSITION IN GA(AS1-XPX) - (S SE AND TE DOPING - EFFECT ON JUNCTION LASER WAVELENGTH - E/T)

被引：38

作者：

HOLONYAK, N

NUESE, CJ

SIRKIS, MD

STILLMAN, GE

机构：

来源：

APPLIED PHYSICS LETTERS | 1966年 / 8卷 / 04期

关键词：

D O I：

10.1063/1.1754498

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：83 / &

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共 7 条

[1] ELECTROLUMINESCENT RECOMBINATION NEAR THE ENERGY GAP IN GAP DIODES
GERSHENZON, M
MIKULYAK, RM
LOGAN, RA
FOY, PW
[J]. SOLID-STATE ELECTRONICS, 1964, 7 (02) : 113 - 124
[2] THE DIRECT-INDIRECT TRANSITION IN GA(AS1-XPX) P-N JUNCTIONS
HOLONYAK, N
BEVACQUA, SF
BIELAN, CV
LUBOWSKI, SJ
[J]. APPLIED PHYSICS LETTERS, 1963, 3 (03) : 47 - 49
[3] HALL-EFFECT MEASUREMENTS OF N-TYPE GALLIUM PHOSPHIDE
MONTGOME.HC
FELDMANN, WL
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) : 3228 - &
[4] PETERSON GA, 1964, 7 P INT C PHYS SEM, P771
[5] SHIMIZU T, 1965, PHYS LETT, V15, P297
[6] ELECTRON MOBILITY IN GAAS1-XPX ALLOYS (ABSENCE OF ALLOY SCATTERING EPITAXIAL LAYERS E/T)
TIETJEN, JJ
WEISBERG, LR
[J]. APPLIED PHYSICS LETTERS, 1965, 7 (10) : 261 - &
[7] WOLFE CM, 1965, J APPL PHYS, V36