HALL-EFFECT MEASUREMENTS OF N-TYPE GALLIUM PHOSPHIDE

[1] ALFREY GF, 1960, Z NATURFORSCH, VA 15, P267

[2] SOME ELECTRICAL PROPERTIES OF P-TYPE GALLIUM PHOSPHIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (JAN-F) : 163 - &

[3] ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1954, 93 (04): : 693 - 706

[4] THE EPITAXIAL GROWTH OF GAP BY A GA2O VAPOR TRANSPORT MECHANISM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (02) : 180 - 184

[5] PRESENCE OF CARBON IN GALLIUM PHOSPHIDE CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (10) : 2060 - &

[6] THE PREPARATION AND FLOATING ZONE PROCESSING OF GALLIUM PHOSPHIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (03) : 251 - 257

[7] FROSCH CJ, 1959, S PREPARATION SINGLE

[8] GERSHENZON M, PRIVATE COMMUNICATIO

[9] HANNAY NB, 1959, SEMICONDUCTORS, pCH5

[10] HALL EFFECT STUDIES OF DOPED ZINC OXIDE SINGLE CRYSTALS [J]. PHYSICAL REVIEW, 1957, 108 (02): : 222 - 230

[1] ALFREY GF, 1960, Z NATURFORSCH, VA 15, P267

[2] SOME ELECTRICAL PROPERTIES OF P-TYPE GALLIUM PHOSPHIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (JAN-F) : 163 - &

[3] ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1954, 93 (04): : 693 - 706

[4] THE EPITAXIAL GROWTH OF GAP BY A GA2O VAPOR TRANSPORT MECHANISM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (02) : 180 - 184

[5] PRESENCE OF CARBON IN GALLIUM PHOSPHIDE CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (10) : 2060 - &

[6] THE PREPARATION AND FLOATING ZONE PROCESSING OF GALLIUM PHOSPHIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (03) : 251 - 257

[7] FROSCH CJ, 1959, S PREPARATION SINGLE

[8] GERSHENZON M, PRIVATE COMMUNICATIO

[9] HANNAY NB, 1959, SEMICONDUCTORS, pCH5

[10] HALL EFFECT STUDIES OF DOPED ZINC OXIDE SINGLE CRYSTALS [J]. PHYSICAL REVIEW, 1957, 108 (02): : 222 - 230