DEGRADATIONS DUE TO HOLE TRAPPING IN FLASH MEMORY CELLS

被引：42

作者：

HADDAD, S

CHANG, C

SWAMINATHAN, B

LIEN, J

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 03期

关键词：

D O I：

10.1109/55.31687

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：117 / 119

页数：3

共 9 条

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[2]

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[5]

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[6]

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[7]

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[8] A 128K FLASH EEPROM USING DOUBLE-POLYSILICON TECHNOLOGY [J].

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SU, CS ;

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[9]

Verma G., 1988, 26th Annual Proceedings. Reliability Physics 1988 (Cat. No.88CH2508-0), P158, DOI 10.1109/RELPHY.1988.23444

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