PROPERTIES OF RF-SPUTTERED B4C THIN-FILMS

被引：29

作者：

CHIANG, CI ^{[1
]}

HOLLECK, H ^{[1
]}

MEYER, O ^{[1
]}

机构：

[1] INST MAT FORSCH,D-76021 KARLSRUHE,GERMANY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1994年 / 91卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(94)96311-8

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We have studied the effect of substrate temperature and dc bias voltage on B4C thin films grown by R.F sputtering on (100) Si substrates. The composition of the films is near the high carbon limit B4C (20 mol% C). Crystalline B4C films begin to grow at substrate temperatures T(s) above 900-degrees-C with a (211) texture. Applying dc biased RF sputtering, the growth direction of the films changed to random orientation and a (111BAR) peak appeared due to continuous bombardment with Ar ions. With bias voltage, crystalline B4C films begin to grow at a T(s) of 1100-degrees-C. With increasing bias voltage, the crystallinity of the films gradually gets completely destroyed. Incorporation of Ar was observed in the sputtered films. The concentration of Ar depends on T(s) and the bias voltage. The results of hardness, indentation fracture and scratch test measurements showed that the films are hard but brittle together with insufficient adhesion.

引用

页码：692 / 695

页数：4

共 7 条

[1] CHARACTERIZATION AND GROWTH MECHANISMS OF BORON-NITRIDE FILMS SYNTHESIZED BY ION-BEAM-ASSISTED DEPOSITION [J].