PREPARATION OF HOT-PRESSED SILICON-GERMANIUM INGOTS .3. VACUUM HOT-PRESSING

被引：14

作者：

LEFEVER, RA ^{[1
]}

MCVAY, GL ^{[1
]}

BAUGHMAN, RJ ^{[1
]}

机构：

[1] SANDIA LABS,ALBUQUERQUE,NM 87115

来源：

MATERIALS RESEARCH BULLETIN | 1974年 / 9卷 / 07期

关键词：

D O I：

10.1016/0025-5408(74)90165-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：863 / 872

页数：10

共 13 条

[1]

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MATERIALS RESEARCH BULLETIN, 1974, 9 (05) :685-692

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[4]

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[6] THERMAL + ELECTRICAL PROPERTIES OF HEAVILY DOPED GE-SI ALLOYS UP TO 1300 DEGREES K [J].

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[7]

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[8] PREPARATION OF GERMANIUM-SILICON THERMO-ELECTRIC ELEMENTS BY HOT PRESSING [J].

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[9]

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[10] PREPARATION OF HOT-PRESSED SILICON-GERMANIUM INGOTS .2. REDUCTION OF CHILL CAST MATERIAL [J].

MCVAY, GL ;

LEFEVER, RA ;

BAUGHMAN, RJ .

MATERIALS RESEARCH BULLETIN, 1974, 9 (06) :735-744

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