THERMAL + ELECTRICAL PROPERTIES OF HEAVILY DOPED GE-SI ALLOYS UP TO 1300 DEGREES K

被引：497

作者：

DISMUKES, JP

EKSTROM, E

BEERS, DS

STEIGMEIER, EF

KUDMAN, I

机构：

来源：

关键词：

D O I：

10.1063/1.1713126

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2899 / &

共 32 条

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