THERMAL + ELECTRICAL PROPERTIES OF HEAVILY DOPED GE-SI ALLOYS UP TO 1300 DEGREES K

被引：497

作者：

DISMUKES, JP

EKSTROM, E

BEERS, DS

STEIGMEIER, EF

KUDMAN, I

机构：

来源：

关键词：

D O I：

10.1063/1.1713126

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2899 / &

共 32 条

[11] DISMUKES JP, TO BE PUBLISHED
[12] A NEW METHOD FOR PRECISION MEASUREMENT OF THE HALL AND MAGNETO-RESISTIVE COEFFICIENTS
DONOGHUE, JJ
EATHERLY, WP
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1951, 22 (07) : 513 - 516
[13] EKSTROM L, TO BE PUBLISHED
[14] GERLICH D, TO BE PUBLISHED
[15] MAGNETORESISTANCE OF GERMANIUM-SILICON ALLOYS
GLICKSMAN, M
[J]. PHYSICAL REVIEW, 1955, 100 (04): : 1146 - 1147
[16] MOBILITY OF ELECTRONS IN GERMANIUM-SILICON ALLOYS
GLICKSMAN, M
[J]. PHYSICAL REVIEW, 1958, 111 (01): : 125 - 128
[17] GLICKSMAN M, 1958, PROGRESS SEMICONDUCT, V3, P1
[18] SPECULATIONS ON THE ENERGY BAND STRUCTURE OF GE-SI ALLOYS
HERMAN, F
[J]. PHYSICAL REVIEW, 1954, 95 (03): : 847 - 848
[19] LEIBFRIED G, 1961, SOLID STATE PHYS, V12, P276
[20] ELECTRICAL PROPERTIES OF GERMANIUM-SILICON ALLOYS
LEVITAS, A
[J]. PHYSICAL REVIEW, 1955, 99 (06): : 1810 - 1814