MOBILITY OF ELECTRONS IN GERMANIUM-SILICON ALLOYS

被引：109

作者：

GLICKSMAN, M

机构：

来源：

PHYSICAL REVIEW | 1958年 / 111卷 / 01期

关键词：

D O I：

10.1103/PhysRev.111.125

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：125 / 128

页数：4

共 15 条

[1] INTRINSIC OPTICAL ABSORPTION IN GERMANIUM-SILICON ALLOYS [J].

BRAUNSTEIN, R ;

MOORE, AR ;

HERMAN, F .

PHYSICAL REVIEW, 1958, 109 (03) :695-710

[2]

BRAUNSTEIN R, COMMUNICATION

[3]

BROOKS H, 1956, B AM PHYS SOC, V1, P48

[4]

BROOKS H, COMMUNICATION

[5] HALL AND DRIFT MOBILITY IN HIGH-RESISTIVITY SINGLE-CRYSTAL SILICON [J].

CRONEMEYER, DC .

PHYSICAL REVIEW, 1957, 105 (02) :522-523

[6] ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM [J].

DEBYE, PP ;

CONWELL, EM .

PHYSICAL REVIEW, 1954, 93 (04) :693-706

[7]

DRESSELHAUS, 1955, PHYS REV, V100, P1218

[8] CONDUCTION BAND STRUCTURE OF GERMANIUM-SILICON ALLOYS [J].

GLICKSMAN, M ;

CHRISTIAN, SM .

PHYSICAL REVIEW, 1956, 104 (05) :1278-1279

[9] MAGNETORESISTANCE OF GERMANIUM-SILICON ALLOYS [J].

GLICKSMAN, M .

PHYSICAL REVIEW, 1955, 100 (04) :1146-1147

[10] GALVANOMAGNETIC EFFECTS IN A SEMICONDUCTOR WITH 2 SETS OF SPHEROIDAL ENERGY SURFACES [J].

GLICKSMAN, M .

PHYSICAL REVIEW, 1956, 102 (06) :1496-1501

← 1 2 →