COMPARISON BETWEEN CVD AND THERMAL OXIDE DIELECTRIC INTEGRITY

[1] ABE H, 1985, DEC IEDM, P397

[2] HOLE TRAPPING AND BREAKDOWN IN THIN SIO2 [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (03) : 164 - 167

[3] CROOK DL, 1979 P INT REL PHYS, P1

[4] IMPACT IONIZATION MODEL FOR DIELECTRIC INSTABILITY AND BREAKDOWN [J]. APPLIED PHYSICS LETTERS, 1974, 25 (12) : 685 - 687

[5] LIANG MS, 1981, DEC IEDM, P396

[6] TIME-DEPENDENT DIELECTRIC-BREAKDOWN OF THIN THERMALLY GROWN SIO2-FILMS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) : 423 - 428

[7] YAMABE K, 1983 P INT REL PHYS, P184

[1] ABE H, 1985, DEC IEDM, P397

[2] HOLE TRAPPING AND BREAKDOWN IN THIN SIO2 [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (03) : 164 - 167

[3] CROOK DL, 1979 P INT REL PHYS, P1

[4] IMPACT IONIZATION MODEL FOR DIELECTRIC INSTABILITY AND BREAKDOWN [J]. APPLIED PHYSICS LETTERS, 1974, 25 (12) : 685 - 687

[5] LIANG MS, 1981, DEC IEDM, P396

[6] TIME-DEPENDENT DIELECTRIC-BREAKDOWN OF THIN THERMALLY GROWN SIO2-FILMS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) : 423 - 428

[7] YAMABE K, 1983 P INT REL PHYS, P184