DYNAMIC PROPERTIES OF GA1-XINXAS SOLID-SOLUTIONS - INFLUENCE OF LOCAL DISTORTION EFFECTS

被引:24
作者
LANDA, G
CARLES, R
RENUCCI, JB
机构
[1] Laboratoire de Physique des Solides, URA.CNRS/74, Université Toulouse III, 31062 Toulouse Cedex
关键词
D O I
10.1016/0038-1098(93)90856-I
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Polarization measurements on Raman spectra of Ga1-xInxAs solid solutions are performed over a wide energy range (10 cm-1 - 600 cm-1) for several concentrations (x = 0, 0.09, 0.20, 0.40, 0.53, 1). They show that this system follows the so-called ''two-mode behaviour''. The predominance of the GaAs band in the Raman spectra and the large splitting of the two longwavelength optical GaAs modes over a large range of composition are correlated to the enhancement of the coupling between the two types of oscillators by local distortion effects.
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页码:351 / 355
页数:5
相关论文
共 39 条
  • [31] RAMAN DETERMINATION OF THE COMPOSITION IN SEMICONDUCTOR TERNARY SOLID-SOLUTIONS
    SAINTCRICQ, N
    LANDA, G
    RENUCCI, JB
    HARDY, I
    MUNOZYAGUE, A
    [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (03) : 1206 - 1208
  • [32] RAMAN-SCATTERING FROM INXGA1-XAS GROWN ON GAAS(001) BY MOLECULAR-BEAM EPITAXY
    SOBIESIERSKI, Z
    WESTWOOD, DI
    WILLIAMS, RH
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1990, 5 (02): : 265 - 268
  • [33] ATOMIC-STRUCTURE AND ORDERING IN SEMICONDUCTOR ALLOYS
    SRIVASTAVA, GP
    MARTINS, JL
    ZUNGER, A
    [J]. PHYSICAL REVIEW B, 1985, 31 (04): : 2561 - 2564
  • [34] TONG WC, 1991, APPL PHYS LETT, V58, P1644
  • [35] COMPARISON AND SPATIAL PROFILING OF STRAIN IN [001]-ORIENTED AND [111]-ORIENTED INXGA1-XAS/GAAS SUPERLATTICES FROM RAMAN AND X-RAY EXPERIMENTS
    VENKATESWARAN, UD
    BURNETT, T
    CUI, LJ
    LI, M
    WEINSTEIN, BA
    KIM, HM
    WIE, CR
    ELCESS, K
    FONSTAD, CG
    MAILHIOT, C
    [J]. PHYSICAL REVIEW B, 1990, 42 (05): : 3100 - 3108
  • [36] CRYSTAL DYNAMICS OF GALLIUM ARSENIDE
    WAUGH, JLT
    DOLLING, G
    [J]. PHYSICAL REVIEW, 1963, 132 (06): : 2410 - +
  • [37] RAMAN-SCATTERING FROM INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES
    WU, CY
    LAO, PD
    SHEN, SC
    [J]. APPLIED PHYSICS LETTERS, 1991, 58 (14) : 1491 - 1493
  • [38] YAMAZAKI S, 1980, J APPL PHYS, V551, P3722
  • [39] STRUCTURAL ORIGIN OF OPTICAL BOWING IN SEMICONDUCTOR ALLOYS
    ZUNGER, A
    JAFFE, JE
    [J]. PHYSICAL REVIEW LETTERS, 1983, 51 (08) : 662 - 665