TRANSIENT TEMPERATURE-VARIATION OF INJECTION-LASERS

[1] THERMAL-CONDUCTIVITY OF GA1-XALXAS ALLOYS [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) : 1292 - 1294

[2] CARSLAW HS, 1959, CONDUCTION HEAT SOLI, pCH14

[3] CASEY HC, 1978, J APPL PHYS, V49, P3684, DOI 10.1063/1.325421

[4] HIGHLY EFFICIENT (GAAL)AS BURIED-HETEROSTRUCTURE LASERS WITH BURIED OPTICAL GUIDE [J]. APPLIED PHYSICS LETTERS, 1979, 35 (07) : 513 - 516

[5] THRESHOLD TEMPERATURE CHARACTERISTICS OF DOUBLE HETEROSTRUCTURE GA1-XALXAS LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) : 3126 - 3131

[6] PHONON SCATTERING IN SEMICONDUCTORS FROM THERMAL CONDUCTIVITY STUDIES [J]. PHYSICAL REVIEW, 1964, 134 (2A): : A471 - +

[7] THERMAL RESISTANCE OF HETEROSTRUCTURE LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (02) : 855 - 862

[8] NEUBERGER M, 1971, HDB ELECTRONIC MATER, V2, P45

[9] SPEIGMEIER EF, 1963, APPL PHYS LETT, V3, P6

[1] THERMAL-CONDUCTIVITY OF GA1-XALXAS ALLOYS [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) : 1292 - 1294

[2] CARSLAW HS, 1959, CONDUCTION HEAT SOLI, pCH14

[3] CASEY HC, 1978, J APPL PHYS, V49, P3684, DOI 10.1063/1.325421

[4] HIGHLY EFFICIENT (GAAL)AS BURIED-HETEROSTRUCTURE LASERS WITH BURIED OPTICAL GUIDE [J]. APPLIED PHYSICS LETTERS, 1979, 35 (07) : 513 - 516

[5] THRESHOLD TEMPERATURE CHARACTERISTICS OF DOUBLE HETEROSTRUCTURE GA1-XALXAS LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) : 3126 - 3131

[6] PHONON SCATTERING IN SEMICONDUCTORS FROM THERMAL CONDUCTIVITY STUDIES [J]. PHYSICAL REVIEW, 1964, 134 (2A): : A471 - +

[7] THERMAL RESISTANCE OF HETEROSTRUCTURE LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (02) : 855 - 862

[8] NEUBERGER M, 1971, HDB ELECTRONIC MATER, V2, P45

[9] SPEIGMEIER EF, 1963, APPL PHYS LETT, V3, P6