A 180-MW ND-LASC3(BO3)4 SINGLE-FREQUENCY TEM(00) MICROCHIP LASER-PUMPED BY AN INJECTION-LOCKED DIODE-LASER ARRAY

被引：31

作者：

BEIER, B ^{[1
]}

MEYN, JP ^{[1
]}

KNAPPE, R ^{[1
]}

BOLLER, KJ ^{[1
]}

HUBER, G ^{[1
]}

WALLENSTEIN, R ^{[1
]}

机构：

[1] UNIV HAMBURG,INST LASER PHYS,D-20355 HAMBURG,GERMANY

来源：

APPLIED PHYSICS B-LASERS AND OPTICS | 1994年 / 58卷 / 05期

关键词：

D O I：

10.1007/BF01081877

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A TEM00 single-frequency, diode-pumped microchip laser of Nd(25%): LaSC3(BO3)4 is operated with an output power of 180 mW. For best performance the laser was pumped by the 450 mW diffraction-limited single-frequency radiation of an injection-locked AlGaAs diode-laser array and cooled to the temperature of liquid nitrogen. The active and passive losses of the microchip laser were investigated by measuring the relaxation oscillation frequency and by comparing the experimental results with values obtained from appropriate rate equations. The power-dependent far-field pattern is in good agreement with the intensity distribution calculated by assuming a thermally induced waveguide cavity.

引用

页码：381 / 388

页数：8

共 12 条

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