KINETICS OF CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN

被引：21

作者：

BRYANT, WA

MEIER, GH

机构：

[1] UNIV PITTSBURGH,DEPT MET & MAT ENGN,PITTSBURGH,PA 15213

[2] WESTINGHOUSE ELECT CORP,ASTRONUCL LAB,PITTSBURGH,PA 15236

来源：

关键词：

D O I：

10.1149/1.2403500

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：559 / 565

页数：7

共 13 条

[1] [Anonymous], 1966, J ELECTROCHEM SOC
[2] VAPOR DEPOSITION OF TUNGSTEN BY HYDROGEN REDUCTION OF TUNGSTEN HEXAFLUORIDE - PROCESS VARIABLES AND PROPERTIES OF DEPOSIT
BERKELEY, JF
BRENNER, A
REID, WE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (06) : 561 - &
[3] Bird R.B., 2006, TRANSPORT PHENOMENA
[4] BRECHER LE, 1970, CHEM VAPOR DEPOSITIO, P37
[5] HASKELL RW, 1970, CHEM VAPOR DEPOSITIO, P63
[6] HOLMAN WR, 1967, P C CHEM VAPOR DEPOS, P127
[7] Kennard E. H., 1938, KINETIC THEORY GASES
[8] LEVENSPIEL O, 1962, CHEMICAL REACTION EN
[9] OXLEY JH, 1962, DMIC170 REP
[10] SCHAFER H, 1964, CHEMICAL TRANSPORT R