HOT SCANNING TUNNELING MICROSCOPE STUDY OF B-TYPE STEP EDGES AND SMALL SILICON ISLANDS ON SI(001)

被引：14

作者：

PEARSON, C

KRUEGER, M

CURTIS, R

BOROVSKY, B

SHI, X

GANZ, E

机构：

[1] Department of Physics, University of Minnesota, Minneapolis

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1995年 / 13卷 / 03期

关键词：

D O I：

10.1116/1.579716

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have used a scanning tunneling microscope to image step edges as well as small Si islands on the Si(001)-2 X1 reconstructed surface at temperatures up to 700 K. We count the changes in the step edge configuration and extract activation energies for the dominant processes. We also observe fluctuations in Si island size at rates that are higher than those we observe on step edges. To aid visualization of the dynamics, we display consecutive images of fluctuating islands and step edges as movies. © 1995, American Vacuum Society. All rights reserved.

引用

页码：1506 / 1510

页数：5

共 30 条

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ALFONSO C, 1991, SURF SCI, V262, P264

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