VARIABLE-TEMPERATURE STM MEASUREMENTS OF STEP KINETICS ON SI(001)

被引：83

作者：

KITAMURA, N ^{[1
]}

SWARTZENTRUBER, BS ^{[1
]}

LAGALLY, MG ^{[1
]}

WEBB, MB ^{[1
]}

机构：

[1] SANDIA NATL LABS, DIV 114, ALBUQUERQUE, NM 87185 USA

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.48.5704

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using a variable-temperature scanning tunneling microscope we have measured the time evolution of the atomic-scale morphology of steps on Si(001) at temperatures up to 350-degrees-C. Step-rearrangement events, i.e., local changes in the atomic arrangements, are observed between successive images at temperatures above 225-degrees-C. The observed events always involve single or multiple units of four atoms and occur most frequently at kink sites and at the ends of dimer rows. By measuring the event rate we determine an effective activation-energy barrier of 1.4-1.7 eV. The events cannot be completely characterized as successive random arrangements involving only single units. Rather, correlations are observed between neighboring dimer columns, and the event rate depends on the local atomic-step configuration.

引用

页码：5704 / 5707

页数：4

共 24 条

[1] ANISOTROPIC VACANCY KINETICS AND SINGLE-DOMAIN STABILIZATION ON SI(100)-2X1 [J].