ANISOTROPY IN SURFACE MIGRATION OF SI AND GE ON SI(001)

被引：227

作者：

MO, YW

LAGALLY, MG

机构：

[1] University of Wisconsin-Madison, Madison

来源：

SURFACE SCIENCE | 1991年 / 248卷 / 03期

关键词：

D O I：

10.1016/0039-6028(91)91177-Y

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The anisotropy in surface migration of Si ad Ge atoms on Si(001) has been investigated by STM analysis of the width of denuded ones at substrate steps that are formed in the spatial distributions of 2D islands after molecular-beam deposition. In both cases, surface migration is at least 1000 times faster along the substrate dimer rows than perpendicular to them.

引用

页码：313 / 320

页数：8

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