SURFACE-DIFFUSION AND PHASE-TRANSITION ON THE GE(111) SURFACE STUDIED BY SCANNING TUNNELING MICROSCOPY

被引：128

作者：

FEENSTRA, RM

SLAVIN, AJ

HELD, GA

LUTZ, MA

机构：

[1] IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights

来源：

PHYSICAL REVIEW LETTERS | 1991年 / 66卷 / 25期

关键词：

D O I：

10.1103/PhysRevLett.66.3257

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The formation of disordered regions is observed on the Ge(111)c2 x 8 surface, at temperatures in the range 150-350-degrees-C. The disorder occurs by the diffusion of surface adatoms in the <011BAR> directions. The disordered regions form at domain boundaries, and grow continuously with temperature until the entire surface becomes disordered at 300-degrees-C. We argue that this phase transition is an example of premelting in two dimensions, i.e., "edge melting."

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页码：3257 / 3260

页数：4

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