ROLE OF STRAIN AND GROWTH-CONDITIONS ON THE GROWTH FRONT PROFILE OF INXGA1-XAS ON GAAS DURING THE PSEUDOMORPHIC GROWTH REGIME

被引:229
作者
BERGER, PR [1 ]
CHANG, K [1 ]
BHATTACHARYA, P [1 ]
SINGH, J [1 ]
BAJAJ, KK [1 ]
机构
[1] USAF,WRIGHT AERONAUT LABS,AVION LAB,AFWAL AADR,WRIGHT PATTERSON AFB,OH 45433
关键词
D O I
10.1063/1.99850
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:684 / 686
页数:3
相关论文
共 12 条
[1]   VARIATION OF THE CRITICAL LAYER THICKNESS WITH IN CONTENT IN STRAINED INX GA1-XAS-GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J].
ANDERSSON, TG ;
CHEN, ZG ;
KULAKOVSKII, VD ;
UDDIN, A ;
VALLIN, JT .
APPLIED PHYSICS LETTERS, 1987, 51 (10) :752-754
[2]  
BALL CAB, 1983, DISLOCATIONS SOLIDS, V6, P121
[3]   ONE-DIMENSIONAL DISLOCATIONS .2. MISFITTING MONOLAYERS AND ORIENTED OVERGROWTH [J].
FRANK, FC ;
VANDERMERWE, JH .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1949, 198 (1053) :216-225
[4]   ONE-DIMENSIONAL DISLOCATIONS .1. STATIC THEORY [J].
FRANK, FC ;
VANDERMERWE, JH .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1949, 198 (1053) :205-216
[5]   CONTROVERSY OF CRITICAL LAYER THICKNESS FOR INGAAS/GAAS STRAINED-LAYER EPITAXY [J].
GOURLEY, PL ;
FRITZ, IJ ;
DAWSON, LR .
APPLIED PHYSICS LETTERS, 1988, 52 (05) :377-379
[6]  
HENDERSON T, 1986 INT EL DEV M, P464
[7]   (100) SUPERLATTICES OF CDTE-CD0.76MN0.24TE ON (100) GAAS [J].
KOLODZIEJSKI, LA ;
GUNSHOR, RL ;
OTSUKA, N ;
ZHANG, XC ;
CHANG, SK ;
NURMIKKO, AV .
APPLIED PHYSICS LETTERS, 1985, 47 (08) :882-884
[8]   OPTICAL-PROPERTIES OF GAAS ON (100) SI USING MOLECULAR-BEAM EPITAXY [J].
MASSELINK, WT ;
HENDERSON, T ;
KLEM, J ;
FISCHER, R ;
PEARAH, P ;
MORKOC, H ;
HAFICH, M ;
WANG, PD ;
ROBINSON, GY .
APPLIED PHYSICS LETTERS, 1984, 45 (12) :1309-1311
[9]   DEFECTS IN EPITAXIAL MULTILAYERS .1. MISFIT DISLOCATIONS [J].
MATTHEWS, JW ;
BLAKESLEE, AE .
JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :118-125
[10]   ELECTRONIC-PROPERTIES OF STRAINED-LAYER SUPER-LATTICES [J].
OSBOURN, GC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02) :379-382