CONTROVERSY OF CRITICAL LAYER THICKNESS FOR INGAAS/GAAS STRAINED-LAYER EPITAXY

被引：140

作者：

GOURLEY, PL

FRITZ, IJ

DAWSON, LR

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 05期

关键词：

D O I：

10.1063/1.99471

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：377 / 379

页数：3

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