P-CHANNEL, STRAINED QUANTUM-WELL, FIELD-EFFECT TRANSISTOR

[1] DEPENDENCE OF CRITICAL LAYER THICKNESS ON STRAIN FOR INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 967 - 969

[2] FRITZ IJ, UNPUB

[3] PARA-CHANNEL ALGAAS-GAAS HETEROSTRUCTURE FETS EMPLOYING TWO-DIMENSIONAL HOLE GAS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (11): : L868 - L870

[4] DEFECTS IN EPITAXIAL MULTILAYERS .3. PREPARATION OF ALMOST PERFECT MULTILAYERS [J]. JOURNAL OF CRYSTAL GROWTH, 1976, 32 (02) : 265 - 273

[5] Reggiani L., 1980, Physics of Nonlinear Transport in Semiconductors. Proceedings of the NATO Advanced Study Institute on Physics of Nonlinear Electron Transport, P467

[6] AN IN0.15GA0.85 AS/GAAS PSEUDOMORPHIC SINGLE QUANTUM WELL HEMT [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (10) : 491 - 493

[7] LIGHT-HOLE CONDUCTION IN INGAAS/GAAS STRAINED-LAYER SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1985, 46 (02) : 187 - 189

[8] STORMER HL, 1984, APPL PHYS LETT, V44, P1062, DOI 10.1063/1.94643

[9] P-CHANNEL MODFETS USING GAALAS/GAAS TWO-DIMENSIONAL HOLE GAS [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (08) : 333 - 335

[10] STRAINED-QUANTUM-WELL, MODULATION-DOPED, FIELD-EFFECT TRANSISTOR [J]. ELECTRONICS LETTERS, 1985, 21 (18) : 823 - 824

[1] DEPENDENCE OF CRITICAL LAYER THICKNESS ON STRAIN FOR INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 967 - 969

[2] FRITZ IJ, UNPUB

[3] PARA-CHANNEL ALGAAS-GAAS HETEROSTRUCTURE FETS EMPLOYING TWO-DIMENSIONAL HOLE GAS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (11): : L868 - L870

[4] DEFECTS IN EPITAXIAL MULTILAYERS .3. PREPARATION OF ALMOST PERFECT MULTILAYERS [J]. JOURNAL OF CRYSTAL GROWTH, 1976, 32 (02) : 265 - 273

[5] Reggiani L., 1980, Physics of Nonlinear Transport in Semiconductors. Proceedings of the NATO Advanced Study Institute on Physics of Nonlinear Electron Transport, P467

[6] AN IN0.15GA0.85 AS/GAAS PSEUDOMORPHIC SINGLE QUANTUM WELL HEMT [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (10) : 491 - 493

[7] LIGHT-HOLE CONDUCTION IN INGAAS/GAAS STRAINED-LAYER SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1985, 46 (02) : 187 - 189

[8] STORMER HL, 1984, APPL PHYS LETT, V44, P1062, DOI 10.1063/1.94643

[9] P-CHANNEL MODFETS USING GAALAS/GAAS TWO-DIMENSIONAL HOLE GAS [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (08) : 333 - 335

[10] STRAINED-QUANTUM-WELL, MODULATION-DOPED, FIELD-EFFECT TRANSISTOR [J]. ELECTRONICS LETTERS, 1985, 21 (18) : 823 - 824