LIGHT-HOLE CONDUCTION IN INGAAS/GAAS STRAINED-LAYER SUPERLATTICES

被引：89

作者：

SCHIRBER, JE

FRITZ, IJ

DAWSON, LR

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 02期

关键词：

D O I：

10.1063/1.95678

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：187 / 189

页数：3

相关论文

共 20 条

[1] SELF-CONSISTENT CALCULATIONS OF ELECTRIC SUBBANDS IN P-TYPE SILICON INVERSION LAYERS
BANGERT, E
LANDWEHR, G
[J]. SURFACE SCIENCE, 1976, 58 (01) : 138 - 140
[2] CHAFFIN RJ, COMMUNICATION
[3] EFFECTS OF UNIAXIAL STRESS ON ELECTROREFLECTANCE SPECTRUM OF GE AND GAAS
CHANDRASEKHAR, M
POLLAK, FH
[J]. PHYSICAL REVIEW B, 1977, 15 (04): : 2127 - 2144
[4] DOPING AND TRANSPORT STUDIES IN INXGA1-XAS/GAAS STRAINED-LAYER SUPER-LATTICES
FRITZ, IJ
DAWSON, LR
ZIPPERIAN, TE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 387 - 390
[5] ELECTRON MOBILITIES IN IN0.2GA0.8AS/GAAS STRAINED-LAYER SUPER-LATTICES
FRITZ, IJ
DAWSON, LR
ZIPPERIAN, TE
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (09) : 846 - 848
[6] FRITZ IJ, 1982, I PHYS C SER, V65, P241
[7] THEORY OF CYCLOTRON RESONANCE IN STRAINED SILICON CRYSTALS
HASEGAWA, H
[J]. PHYSICAL REVIEW, 1963, 129 (03): : 1029 - &
[8] CYCLOTRON RESONANCE EXPERIMENTS IN UNIAXIALLY STRESSED SILICON - VALENCE BAND INVERSE MASS PARAMETERS AND DEFORMATION POTENTIALS
HENSEL, JC
FEHER, G
[J]. PHYSICAL REVIEW, 1963, 129 (03): : 1041 - &
[9] VALENCE-BAND PARAMETERS IN CUBIC SEMICONDUCTORS
LAWAETZ, P
[J]. PHYSICAL REVIEW B, 1971, 4 (10): : 3460 - &
[10] DEFECTS IN EPITAXIAL MULTILAYERS .3. PREPARATION OF ALMOST PERFECT MULTILAYERS
MATTHEWS, JW
BLAKESLEE, AE
[J]. JOURNAL OF CRYSTAL GROWTH, 1976, 32 (02) : 265 - 273