DOPING AND TRANSPORT STUDIES IN INXGA1-XAS/GAAS STRAINED-LAYER SUPER-LATTICES

被引：37

作者：

FRITZ, IJ

DAWSON, LR

ZIPPERIAN, TE

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 02期

关键词：

D O I：

10.1116/1.582563

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：387 / 390

页数：4

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