DEFECTS IN EPITAXIAL MULTILAYERS .3. PREPARATION OF ALMOST PERFECT MULTILAYERS

被引：575

作者：

MATTHEWS, JW ^{[1
]}

BLAKESLEE, AE ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598

来源：

JOURNAL OF CRYSTAL GROWTH | 1976年 / 32卷 / 02期

关键词：

D O I：

10.1016/0022-0248(76)90041-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：265 / 273

页数：9

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[9] DEFECTS IN EPITAXIAL MULTILAYERS .1. MISFIT DISLOCATIONS
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[10] DEFECTS IN EPITAXIAL MULTILAYERS .2. DISLOCATION PILE-UPS, THREADING DISLOCATIONS, SLIP LINES AND CRACKS
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