ACCOMMODATION OF MISFIT ACROSS INTERFACE TEBWEEN CRYSTALS OF SEMICONDUCTING ELEMENTS OR COMPOUNDS

[1] DISLOCATION MORPHOLOGY IN GRADED HETEROJUNCTIONS - GAAS1-XPX [J]. JOURNAL OF MATERIALS SCIENCE, 1969, 4 (03) : 223 - &

[2] ABRAHAMS MS, 1969, J APPL PHYS, V46, P3754

[3] Alexander H., 1969, SOLID STATE PHYS, V22, P27, DOI DOI 10.1016/S0081-1947(08)60031-4

[4] EPITAXIAL GROWTH OF MIRROR SMOOTH GE ON GAAS AND GE BY LOW TEMPERATURE GEL2 DISPROPORTIONATION REACTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (09) : 966 - &

[5] EPITAXIALLY INDUCED STRAINS IN CU2O FILMS ON COPPER SINGLE CRYSTALS .1. X-RAY DIFFRACTION EFFECTS [J]. ACTA METALLURGICA, 1962, 10 (AUG): : 691 - &

[6] CABRERA N, 1965, MEM ETUD SCI REV MET, V62, P205

[7] THEORY OF DISLOCATION MOBILITY IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1963, 131 (01): : 58 - &

[8] SCREW DISLOCATION IN CRYSTALS WITH DIAMOND STRUCTURE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 19 (1-2) : 100 - 104

[9] VELOCITIES AND DENSITIES OF DISLOCATIONS IN GERMANIUM AND OTHER SEMICONDUCTOR CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (09) : 2736 - &

[10] PRECISION THERMAL EXPANSION MEASUREMENTS OF SEMI-INSULATING GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4870 - &

[1] DISLOCATION MORPHOLOGY IN GRADED HETEROJUNCTIONS - GAAS1-XPX [J]. JOURNAL OF MATERIALS SCIENCE, 1969, 4 (03) : 223 - &

[2] ABRAHAMS MS, 1969, J APPL PHYS, V46, P3754

[3] Alexander H., 1969, SOLID STATE PHYS, V22, P27, DOI DOI 10.1016/S0081-1947(08)60031-4

[4] EPITAXIAL GROWTH OF MIRROR SMOOTH GE ON GAAS AND GE BY LOW TEMPERATURE GEL2 DISPROPORTIONATION REACTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (09) : 966 - &

[5] EPITAXIALLY INDUCED STRAINS IN CU2O FILMS ON COPPER SINGLE CRYSTALS .1. X-RAY DIFFRACTION EFFECTS [J]. ACTA METALLURGICA, 1962, 10 (AUG): : 691 - &

[6] CABRERA N, 1965, MEM ETUD SCI REV MET, V62, P205

[7] THEORY OF DISLOCATION MOBILITY IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1963, 131 (01): : 58 - &

[8] SCREW DISLOCATION IN CRYSTALS WITH DIAMOND STRUCTURE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 19 (1-2) : 100 - 104

[9] VELOCITIES AND DENSITIES OF DISLOCATIONS IN GERMANIUM AND OTHER SEMICONDUCTOR CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (09) : 2736 - &

[10] PRECISION THERMAL EXPANSION MEASUREMENTS OF SEMI-INSULATING GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4870 - &