EPITAXIAL GROWTH OF MIRROR SMOOTH GE ON GAAS AND GE BY LOW TEMPERATURE GEL2 DISPROPORTIONATION REACTION

被引：25

作者：

BERKENBL.M

REISMAN, A

LIGHT, TB

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1968年 / 115卷 / 09期

关键词：

D O I：

10.1149/1.2411489

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：966 / &

共 16 条

[1]

ADAMS RM, 1964, BORON METALLOBORON C

[2]

COLE H, 1962, J APPL PHYS, V33, P227

[3]

FAUST JW, ETCHING 3 5 INTERMET

[4] PLASTIC DEFORMATION IN EPITAXIAL GE LAYERS GROWN ON SINGLE CRYSTAL SEMI-INSULATING GAAS [J].

LIGHT, TB ;

BERKENBL.M ;

REISMAN, A .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (09) :969-&

[5] EPITAXIAL VAPOR GROWTH OF GE SINGLE CRYSTALS IN A CLOSED-CYCLE PROCESS [J].

MARINACE, JC .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) :248-255

[6]

PAPAZIAN SA, 1967, 159 CHIC M ABSTR

[7] ROOM TEMPERATURE CHEMICAL POLISHING OF GE AND GAAS [J].

REISMAN, A ;

ROHR, R .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (12) :1425-1428

[8] SUBSTRATE ORIENTATION EFFECTS AND GERMANIUM EPITAXY IN AN OPEN TUBE HL TRANSPORT SYSTEM [J].

REISMAN, A ;

BERKENBLIT, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (03) :315-+

[9] THERMODYNAMIC ANALYSES OF OPEN TUBE GERMANIUM DISPROPORTIONATION REACTIONS [J].

REISMAN, A ;

ALYANAKYAN, SA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (10) :1154-1164

[10] TRANSPIRATION STUDIES OF GE-I2-INERT GAS SYSTEM [J].

REISMAN, A ;

BERKENBL.M ;

ALYANAKY.SA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (2P1) :241-&

← 1 2 →