VAPOR GROWTH OF A SEMICONDUCTOR SUPERLATTICE

[1] STRESSES IN HETEROEPITAXIAL LAYERS - GAAS1-XPX ON GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) : 3754 - &

[2] BARRETT CS, 1966, STRUCTURE METALS, pCH11

[3] BLAKESLEE AE, 1969, T METALL SOC AIME, V245, P577

[4] SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (01) : 61 - &

[5] ESAKI L, 1970, SEP P INT C LOW TEMP

[6] COMPOSITIONAL INHOMOGENEITIES IN GAAS1-XPX ALLOY EPITAXIAL LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (13) : 5943 - &

[7] PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED EPITAXIAL GAAS1-XPX USING ARSINE AND PHOSPHINE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) : 724 - &

[1] STRESSES IN HETEROEPITAXIAL LAYERS - GAAS1-XPX ON GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) : 3754 - &

[2] BARRETT CS, 1966, STRUCTURE METALS, pCH11

[3] BLAKESLEE AE, 1969, T METALL SOC AIME, V245, P577

[4] SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (01) : 61 - &

[5] ESAKI L, 1970, SEP P INT C LOW TEMP

[6] COMPOSITIONAL INHOMOGENEITIES IN GAAS1-XPX ALLOY EPITAXIAL LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (13) : 5943 - &

[7] PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED EPITAXIAL GAAS1-XPX USING ARSINE AND PHOSPHINE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) : 724 - &