PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED EPITAXIAL GAAS1-XPX USING ARSINE AND PHOSPHINE

被引：292

作者：

TIETJEN, JJ

AMICK, JA

机构：

来源：

关键词：

D O I：

10.1149/1.2424100

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：724 / &

共 18 条

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BUIOCCHI, CJ
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[2] ABRAHAMS MS, TO BE PUBLISHED
[3] AMICK JA, 1963, RCA REV, V24, P555
[4] RECOMBINATION SCHEME + INTRINSIC GAP VARIATION IN GAAS1-XPX SEMICONDUCTORS FROM ELECTRON BEAM + P-N DIODE EXCITATION (77 + 300 DEGREES K E)
CUSANO, DA
CARLSON, RO
FENNER, GE
[J]. APPLIED PHYSICS LETTERS, 1964, 5 (07) : 144 - &
[5] FENNER GE, 1964, PHYS REV, V134, P1113
[6] FLICKER H, 1960, B AM PHYS SOC, V5, P407
[7] VAPOR PHASE TRANSPORT AND EPITAXIAL GROWTH OF GAAS1-XPX USING WATER VAPOR
GOTTLIEB, GE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (2P1) : 192 - &
[8] GOYDISH BL, TO BE PUBLISHED
[9] Hilsum C., 1961, SEMICONDUCTING 3 4 C, P167
[10] HOLONYAK N, 1962, METALLURGY SEMICONDU, P49