AN IN0.15GA0.85 AS/GAAS PSEUDOMORPHIC SINGLE QUANTUM WELL HEMT

被引：184

作者：

ROSENBERG, JJ ^{[1
]}

BENLAMRI, M ^{[1
]}

KIRCHNER, PD ^{[1
]}

WOODALL, JM ^{[1
]}

PETTIT, GD ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 10期

关键词：

D O I：

10.1109/EDL.1985.26205

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：491 / 493

页数：3

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[6] FERMI-LEVEL PINNING BY MISFIT DISLOCATIONS AT GAAS INTERFACES
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