PHOTOCONDUCTIVITY EFFECTS IN EXTREMELY HIGH MOBILITY MODULATION-DOPED (AL,GA)AS/GAAS HETEROSTRUCTURES

被引:71
作者
DRUMMOND, TJ [1 ]
KOPP, W [1 ]
FISCHER, R [1 ]
MORKOC, H [1 ]
THORNE, RE [1 ]
CHO, AY [1 ]
机构
[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
关键词
D O I
10.1063/1.330537
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1238 / 1240
页数:3
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