LARGE-LATTICE-RELAXATION MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN COMPOUND SEMICONDUCTORS

被引：622

作者：

LANG, DV ^{[1
]}

LOGAN, RA ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW LETTERS | 1977年 / 39卷 / 10期

关键词：

D O I：

10.1103/PhysRevLett.39.635

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：635 / 639

页数：5

共 14 条

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PHYSICAL REVIEW B, 1977, 15 (02) :989-1016

[4] NON-G DONOR LEVELS AND KINETICS OF ELECTRON-TRANSFER IN N-TYPE CDTE [J].

ISELER, GW ;

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STRAUSS, AJ ;

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KEYES, RJ .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (06) :2619-&

[6] STUDY OF DEEP LEVELS IN GAAS BY CAPACITANCE SPECTROSCOPY [J].

LANG, DV ;

LOGAN, RA .

JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (05) :1053-1066

[7] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

[8] SOME PROPERTIES OF DOUBLE ACCEPTOR CENTER IN CDTE [J].

LORENZ, MR ;

WOODBURY, HH ;

SEGALL, B .

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[9]

MACMILLAN HF, 1972, THESIS STANFORD U

[10]

NELSON RO, TO BE PUBLISHED

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