STUDY OF DEEP LEVELS IN GAAS BY CAPACITANCE SPECTROSCOPY

被引：343

作者：

LANG, DV ^{[1
]}

LOGAN, RA ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1975年 / 4卷 / 05期

关键词：

D O I：

10.1007/BF02660189

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1053 / 1066

页数：14

共 16 条

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[3]

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[5]

HENRY CH, 1974, 12TH P INT C PHYS SE, P411

[6] ANALYSES OF TRANSIENT CAPACITANCE EXPERIMENTS FOR AU-GAAS SCHOTTKY-BARRIER DIODES IN PRESENCE OF DEEP IMPURITIES AND INTERFACIAL LAYER [J].

HUANG, CI ;

LI, SS .

SOLID-STATE ELECTRONICS, 1973, 16 (12) :1481-1486

[7]

HUGHES FD, 1972, ACTA ELECTRON, V15, P43

[8] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

[9] FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3014-3022

[10]

MILNES AG, 1973, DEEP IMPURITIES SEMI, P48

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