ANALYSES OF TRANSIENT CAPACITANCE EXPERIMENTS FOR AU-GAAS SCHOTTKY-BARRIER DIODES IN PRESENCE OF DEEP IMPURITIES AND INTERFACIAL LAYER

被引：16

作者：

HUANG, CI ^{[1
]}

LI, SS ^{[1
]}

机构：

[1] UNIV FLORIDA,DEPT ELECT ENGN,GAINESVILLE,FL 32601

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 12期

关键词：

D O I：

10.1016/0038-1101(73)90065-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1481 / 1486

页数：6

共 14 条

[1] STRAPPING ANALYSIS IN GALLIUM ARSENIDE [J].

CARBALLES, JC ;

LEBAILLY, J .

SOLID STATE COMMUNICATIONS, 1968, 6 (03) :167-+

[2] DEPLETION CAPACITANCE AND DIFFUSION POTENTIAL OF GALLIUM PHOSPHIDE SCHOTTKY-BARRIER DIODES [J].

COWLEY, AM .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (08) :3024-&

[3] SURFACE STATE AND INTERFACE EFFECTS ON CAPACITANCE-VOLTAGE RELATIONSHIP IN SCHOTTKY BARRIERS [J].

CROWELL, CR ;

ROBERTS, GI .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) :3726-&

[4] TRANSIENT PHENOMENA IN CAPACITANCE AND REVERSE CURRENT IN A GAAS SCHOTTKY BARRIER DIODE [J].

FURUKAWA, Y ;

ISHIBASHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (01) :13-+

[5] TRANSIENT PHENOMENA IN CAPACITANCE OF GAAS SCHOTTKY BARRIER DIODES [J].

FURUKAWA, Y ;

ISHIBASHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (09) :837-+

[6]

GLOVER GH, 1972, IEEE T ELECTRON DEVI, VED19, P138

[7] METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM [J].

GOODMAN, AM .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) :329-&

[8]

HUANG CI, 1973, IEEE P LETT, V61, P488

[9] THERMAL AND OPTICAL EMISSION AND CAPTURE RATES AND CROSS SECTIONS OF ELECTRONS AND HOLES AT IMPERFECTION CENTERS IN SEMICONDUCTORS FROM PHOTO AND DARK JUNCTION CURRENT AND CAPACITANCE EXPERIMENTS [J].

SAH, CT ;

FORBES, L ;

ROSIER, LL ;

TASCH, AF .

SOLID-STATE ELECTRONICS, 1970, 13 (06) :759-+

[10] CAPACITANCE MEASUREMENTS ON AU-GAAS SCHOTTKY BARRIERS [J].

SENECHAL, RR ;

BASINSKI, J .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) :4581-+

← 1 2 →