TRANSPORT-PROPERTIES OF SN-DOPED ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：39

作者：

MORKOC, H

CHO, AY

RADICE, C

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[2] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 09期

关键词：

D O I：

10.1063/1.328324

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4882 / 4884

页数：3

共 17 条

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[4]

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[5]

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[6] INFLUENCE OF GROWTH-CONDITIONS ON THE THRESHOLD CURRENT-DENSITY OF DOUBLE-HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY [J].

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RADICE, C ;

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[7] GAAS EPITAXY BY A MOLECULAR BEAM METHOD - OBSERVATIONS OF SURFACE STRUCTURE ON (001) FACE [J].

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) :2074-&

[8] NON-ALLOYED AND INSITU OHMIC CONTACTS TO HIGHLY DOPED N-TYPE GAAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY (MBE) FOR FIELD-EFFECT TRANSISTORS [J].

DILORENZO, JV ;

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JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :951-954

[9]

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[10] STUDY OF ELECTRON TRAPS IN N-GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

LANG, DV ;

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JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) :2558-2564

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