CRITICAL LAYER THICKNESS IN IN0.2GA0.8AS/GAAS SINGLE STRAINED QUANTUM-WELL STRUCTURES

[1] PHOTOLUMINESCENCE OF INXGA1-XAS-GAAS STRAINED-LAYER SUPERLATTICES [J]. JOURNAL OF ELECTRONIC MATERIALS, 1985, 14 (02) : 187 - 202

[2] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 436 - 440

[3] DEPENDENCE OF CRITICAL LAYER THICKNESS ON STRAIN FOR INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 967 - 969

[4] DISLOCATION FILTERING IN SEMICONDUCTOR SUPERLATTICES WITH LATTICE-MATCHED AND LATTICE-MISMATCHED LAYER MATERIALS [J]. APPLIED PHYSICS LETTERS, 1986, 49 (17) : 1101 - 1103

[5] ELIMINATION OF DARK LINE DEFECTS IN LATTICE-MISMATCHED EPILAYERS THROUGH USE OF STRAINED-LAYER SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1985, 47 (05) : 482 - 484

[6] GOURLEY PL, 1986, MATER RES SOC S P, V56, P229

[7] X-RAY STUDY OF MISFIT STRAIN RELAXATION IN LATTICE-MISMATCHED HETEROJUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1986, 49 (17) : 1071 - 1073

[8] EFFECTS OF STRAIN AND LAYER THICKNESS ON THE GROWTH OF INXGA1-XAS-GAAS STRAINED-LAYER SUPERLATTICES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 181 - 185

[9] ACCOMMODATION OF MISFIT ACROSS INTERFACE TEBWEEN CRYSTALS OF SEMICONDUCTING ELEMENTS OR COMPOUNDS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) : 3800 - &

[10] MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2

[1] PHOTOLUMINESCENCE OF INXGA1-XAS-GAAS STRAINED-LAYER SUPERLATTICES [J]. JOURNAL OF ELECTRONIC MATERIALS, 1985, 14 (02) : 187 - 202

[2] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 436 - 440

[3] DEPENDENCE OF CRITICAL LAYER THICKNESS ON STRAIN FOR INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 967 - 969

[4] DISLOCATION FILTERING IN SEMICONDUCTOR SUPERLATTICES WITH LATTICE-MATCHED AND LATTICE-MISMATCHED LAYER MATERIALS [J]. APPLIED PHYSICS LETTERS, 1986, 49 (17) : 1101 - 1103

[5] ELIMINATION OF DARK LINE DEFECTS IN LATTICE-MISMATCHED EPILAYERS THROUGH USE OF STRAINED-LAYER SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1985, 47 (05) : 482 - 484

[6] GOURLEY PL, 1986, MATER RES SOC S P, V56, P229

[7] X-RAY STUDY OF MISFIT STRAIN RELAXATION IN LATTICE-MISMATCHED HETEROJUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1986, 49 (17) : 1071 - 1073

[8] EFFECTS OF STRAIN AND LAYER THICKNESS ON THE GROWTH OF INXGA1-XAS-GAAS STRAINED-LAYER SUPERLATTICES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 181 - 185

[9] ACCOMMODATION OF MISFIT ACROSS INTERFACE TEBWEEN CRYSTALS OF SEMICONDUCTING ELEMENTS OR COMPOUNDS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) : 3800 - &

[10] MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2