ELIMINATION OF DARK LINE DEFECTS IN LATTICE-MISMATCHED EPILAYERS THROUGH USE OF STRAINED-LAYER SUPERLATTICES

被引：37

作者：

GOURLEY, PL

BIEFELD, RM

DAWSON, LR

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 05期

关键词：

D O I：

10.1063/1.96099

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：482 / 484

页数：3

共 15 条

[1] PHOTOLUMINESCENCE OF INXGA1-XAS-GAAS STRAINED-LAYER SUPERLATTICES [J].

ANDERSON, NG ;

LAIDIG, WD ;

LIN, YF .

JOURNAL OF ELECTRONIC MATERIALS, 1985, 14 (02) :187-202

[2]

BIEFELD RM, 1983, J ELECTRON MATER, V12, P903, DOI 10.1007/BF02655302

[3] MORPHOLOGY OF GAAS1-XPX SUPERLATTICES GROWN BY MOCVD AND CHLORIDE VPE [J].

BLAKESLEE, AE ;

KIBBLER, A ;

WANLASS, MW .

SUPERLATTICES AND MICROSTRUCTURES, 1985, 1 (04) :339-345

[4]

BLAKESLEE AE, UNPUB

[5] A UNIFYING INTERPRETATION OF DARK LINE DEFECTS IN GAAS AND BRIGHT DISLOCATION HALOS IN GAP [J].

FRANK, W ;

GOSELE, U .

PHYSICA B & C, 1983, 116 (1-3) :420-424

[6] DEPENDENCE OF CRITICAL LAYER THICKNESS ON STRAIN FOR INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES [J].

FRITZ, IJ ;

PICRAUX, ST ;

DAWSON, LR ;

DRUMMOND, TJ ;

LAIDIG, WD ;

ANDERSON, NG .

APPLIED PHYSICS LETTERS, 1985, 46 (10) :967-969

[7] MINORITY-CARRIER DIFFUSION LENGTHS IN GAP/GAASXP1-X STRAINED-LAYER SUPERLATTICES [J].

GOURLEY, PL ;

BIEFELD, RM ;

ZIPPERIAN, TE ;

WICZER, JJ .

APPLIED PHYSICS LETTERS, 1984, 44 (10) :983-985

[8]

GOURLEY PL, 1983, 10TH P INT S GAAS RE, P249

[9] PHOTOLUMINESCENCE AT DISLOCATION IN GAAS [J].

HEINKE, W ;

QUEISSER, HJ .

PHYSICAL REVIEW LETTERS, 1974, 33 (18) :1082-1084

[10]

HORNSTRA J, 1958, J PHYS CHEM SOLIDS, V5, P29

← 1 2 →