PHOTOLUMINESCENCE OF INXGA1-XAS-GAAS STRAINED-LAYER SUPERLATTICES

被引：32

作者：

ANDERSON, NG

LAIDIG, WD

LIN, YF

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1985年 / 14卷 / 02期

关键词：

D O I：

10.1007/BF02656675

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：187 / 202

页数：16

共 10 条

[1]

ANDERSON NG, 1984, MATERIALS RES SOC M

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[3] STRAINED-LAYER QUANTUM-WELL INJECTION-LASER [J].

LAIDIG, WD ;

CALDWELL, PJ ;

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PENG, CK .

APPLIED PHYSICS LETTERS, 1984, 44 (07) :653-655

[4] EFFECTS OF STRAIN AND LAYER THICKNESS ON THE GROWTH OF INXGA1-XAS-GAAS STRAINED-LAYER SUPERLATTICES [J].

LAIDIG, WD ;

PENG, CK ;

LIN, YF .

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[5] PROPERTIES OF INXGA1-XAS-GAAS STRAINED-LAYER QUANTUM-WELL-HETEROSTRUCTURE INJECTION-LASERS [J].

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LIN, YF ;

CALDWELL, PJ .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (01) :33-38

[6] CONTINUOUS 300-K LASER OPERATION OF STRAINED SUPER-LATTICES [J].

LUDOWISE, MJ ;

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CAMRAS, MD ;

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FULLER, BK ;

NIXON, MA .

APPLIED PHYSICS LETTERS, 1983, 42 (06) :487-489

[7] OPTICAL STUDIES OF INXGA1-XAS-GAAS STRAINED MULTIQUANTUM WELL STRUCTURES [J].

MARZIN, JY ;

RAO, EVK .

APPLIED PHYSICS LETTERS, 1983, 43 (06) :560-562

[8]

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[9] STRAINED-LAYER SUPER-LATTICES FROM LATTICE MISMATCHED MATERIALS [J].

OSBOURN, GC .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) :1586-1589

[10] GROWTH-CONDITIONS AND CHARACTERIZATION OF INGAAS GAAS STRAINED LAYERS SUPERLATTICES [J].

QUILLEC, M ;

GOLDSTEIN, L ;

LEROUX, G ;

BURGEAT, J ;

PRIMOT, J .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) :2904-2909

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