STRAINED-LAYER QUANTUM-WELL INJECTION-LASER

[1] DAWSON LR, 1983, 5TH MOL BEAM EP WORK

[2] DOPING AND TRANSPORT STUDIES IN INXGA1-XAS/GAAS STRAINED-LAYER SUPER-LATTICES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 387 - 390

[3] GA(AS,P) STRAINED-LAYER SUPER-LATTICES - A TERNARY SEMICONDUCTOR WITH INDEPENDENTLY ADJUSTABLE BAND-GAP AND LATTICE-CONSTANT [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 383 - 386

[4] HOLONYAK N, 1983, JUN DEV RES C BURL

[5] ALL-BINARY ALAS-GAAS LASER DIODE [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (07) : 212 - 214

[6] LAIDIG WD, 1983, UNPUB 5TH MOL BEAM E

[7] CONTINUOUS 300-K LASER OPERATION OF STRAINED SUPER-LATTICES [J]. APPLIED PHYSICS LETTERS, 1983, 42 (06) : 487 - 489

[8] STIMULATED-EMISSION IN STRAINED GAAS1-XPX-GAAS1-YPY SUPER-LATTICES [J]. APPLIED PHYSICS LETTERS, 1983, 42 (03) : 257 - 259

[9] LUDOWISE MJ, 1983, JUN EL MAT C BURL

[10] DEFECTS IN EPITAXIAL MULTILAYERS .1. MISFIT DISLOCATIONS [J]. JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) : 118 - 125

[1] DAWSON LR, 1983, 5TH MOL BEAM EP WORK

[2] DOPING AND TRANSPORT STUDIES IN INXGA1-XAS/GAAS STRAINED-LAYER SUPER-LATTICES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 387 - 390

[3] GA(AS,P) STRAINED-LAYER SUPER-LATTICES - A TERNARY SEMICONDUCTOR WITH INDEPENDENTLY ADJUSTABLE BAND-GAP AND LATTICE-CONSTANT [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 383 - 386

[4] HOLONYAK N, 1983, JUN DEV RES C BURL

[5] ALL-BINARY ALAS-GAAS LASER DIODE [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (07) : 212 - 214

[6] LAIDIG WD, 1983, UNPUB 5TH MOL BEAM E

[7] CONTINUOUS 300-K LASER OPERATION OF STRAINED SUPER-LATTICES [J]. APPLIED PHYSICS LETTERS, 1983, 42 (06) : 487 - 489

[8] STIMULATED-EMISSION IN STRAINED GAAS1-XPX-GAAS1-YPY SUPER-LATTICES [J]. APPLIED PHYSICS LETTERS, 1983, 42 (03) : 257 - 259

[9] LUDOWISE MJ, 1983, JUN EL MAT C BURL

[10] DEFECTS IN EPITAXIAL MULTILAYERS .1. MISFIT DISLOCATIONS [J]. JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) : 118 - 125