STIMULATED-EMISSION IN STRAINED-LAYER QUANTUM-WELL HETEROSTRUCTURES

被引：66

作者：

CAMRAS, MD

BROWN, JM

HOLONYAK, N

NIXON, MA

KALISKI, RW

LUDOWISE, MJ

DIETZE, WT

LEWIS, CR

机构：

[1] UNIV ILLINOIS, MAT RES LAB, URBANA, IL 61801 USA

[2] VARIAN ASSOCIATES, CORP SOLID STATE LAB, PALO ALTO, CA 94303 USA

来源：

关键词：

D O I：

10.1063/1.331932

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6183 / 6189

页数：7

共 17 条

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[4] LOW THRESHOLD PHOTOPUMPED ALXGA1-XAS QUANTUM-WELL HETEROSTRUCTURE LASERS
BURNHAM, RD
STREIFER, W
SCIFRES, DR
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CAMRAS, MD
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[5] PHOTOPUMPED LOW THRESHOLD ALX'GA1-X'AS-ALX'GA1-X'AS-ALXGA1-XAS(X'-APPROXIMATELY-0.85,X'-APPROXIMATELY-0.3,X=0) SINGLE QUANTUM WELL LASERS
CAMRAS, MD
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BURNHAM, RD
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[6] GAAS-GAASP HETEROSTRUCTURE INJECTION LASERS
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) : 355 - +
[7] DUPUIS RD, 1979, 7TH P INT S GAAS REL, P1
[8] Holonyak Jr N., 1962, METALLURGY SEMICONDU, V15, P49
[9] QUANTUM-WELL HETEROSTRUCTURE LASERS
HOLONYAK, N
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DUPUIS, RD
DAPKUS, PD
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) : 170 - 186
[10] HOLONYAK N, 1966, Patent No. 3249473