X-RAY STUDY OF MISFIT STRAIN RELAXATION IN LATTICE-MISMATCHED HETEROJUNCTIONS

[1] DIRECT OBSERVATION OF LATTICE DISTORTION IN A STRAINED-LAYER SUPER-LATTICE [J]. APPLIED PHYSICS LETTERS, 1983, 43 (09) : 863 - 865

[2] EFFECT OF LAYER SIZE ON LATTICE DISTORTION IN STRAINED-LAYER SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1984, 44 (12) : 1158 - 1160

[3] DEFECT STRUCTURE IN III-V-COMPOUND SEMICONDUCTORS - GENERATION AND EVOLUTION OF DEFECT STRUCTURES IN INGAAS AND INGAASP EPITAXIAL LAYER GROWN BY HYDRIDE TRANSPORT VAPOR-PHASE EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (10) : 3441 - 3447

[4] MISFIT STRESS IN INGAAS/INP HETEROEPITAXIAL STRUCTURES GROWN BY VAPOR-PHASE EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) : 249 - 257

[5] DOUBLE-CRYSTAL SPECTROMETER MEASUREMENTS OF LATTICE-PARAMETERS AND X-RAY TOPOGRAPHY ON HETEROJUNCTIONS GAAS-ALXGA1-XAS [J]. ACTA CRYSTALLOGRAPHICA SECTION A, 1976, 32 (JUL1): : 627 - &

[6] COMMENSURATE AND INCOMMENSURATE STRUCTURES IN MOLECULAR-BEAM EPITAXIALLY GROWN GEXSI1-X FILMS ON SI(100) [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 1227 - 1229

[7] COMBINED USE OF ION BACKSCATTERING AND X-RAY ROCKING CURVES IN THE ANALYSES OF SUPERLATTICES [J]. PHYSICAL REVIEW B, 1985, 31 (04): : 2343 - 2347

[8] PHOTOLUMINESCENCE STUDY OF INXAL1-XAS-GAAS STRAINED-LAYER SUPERLATTICES [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) : 588 - 592

[9] MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2

[10] RAMAN-STUDY OF GAAS-INXAL1-XAS STRAINED-LAYER SUPERLATTICES [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) : 4342 - 4345

[1] DIRECT OBSERVATION OF LATTICE DISTORTION IN A STRAINED-LAYER SUPER-LATTICE [J]. APPLIED PHYSICS LETTERS, 1983, 43 (09) : 863 - 865

[2] EFFECT OF LAYER SIZE ON LATTICE DISTORTION IN STRAINED-LAYER SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1984, 44 (12) : 1158 - 1160

[3] DEFECT STRUCTURE IN III-V-COMPOUND SEMICONDUCTORS - GENERATION AND EVOLUTION OF DEFECT STRUCTURES IN INGAAS AND INGAASP EPITAXIAL LAYER GROWN BY HYDRIDE TRANSPORT VAPOR-PHASE EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (10) : 3441 - 3447

[4] MISFIT STRESS IN INGAAS/INP HETEROEPITAXIAL STRUCTURES GROWN BY VAPOR-PHASE EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) : 249 - 257

[5] DOUBLE-CRYSTAL SPECTROMETER MEASUREMENTS OF LATTICE-PARAMETERS AND X-RAY TOPOGRAPHY ON HETEROJUNCTIONS GAAS-ALXGA1-XAS [J]. ACTA CRYSTALLOGRAPHICA SECTION A, 1976, 32 (JUL1): : 627 - &

[6] COMMENSURATE AND INCOMMENSURATE STRUCTURES IN MOLECULAR-BEAM EPITAXIALLY GROWN GEXSI1-X FILMS ON SI(100) [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 1227 - 1229

[7] COMBINED USE OF ION BACKSCATTERING AND X-RAY ROCKING CURVES IN THE ANALYSES OF SUPERLATTICES [J]. PHYSICAL REVIEW B, 1985, 31 (04): : 2343 - 2347

[8] PHOTOLUMINESCENCE STUDY OF INXAL1-XAS-GAAS STRAINED-LAYER SUPERLATTICES [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) : 588 - 592

[9] MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2

[10] RAMAN-STUDY OF GAAS-INXAL1-XAS STRAINED-LAYER SUPERLATTICES [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) : 4342 - 4345