DEFECT STRUCTURE IN III-V-COMPOUND SEMICONDUCTORS - GENERATION AND EVOLUTION OF DEFECT STRUCTURES IN INGAAS AND INGAASP EPITAXIAL LAYER GROWN BY HYDRIDE TRANSPORT VAPOR-PHASE EPITAXY

被引：23

作者：

CHU, SNG

NAKAHARA, S

KARLICEK, RF

STREGE, KE

MITCHAM, D

JOHNSTON, WD

机构：

来源：

关键词：

D O I：

10.1063/1.336812

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3441 / 3447

页数：7

共 18 条

[1] Al-Jassim M. M., 1981, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P521
[2] CATHODOLUMINESCENCE EVALUATION OF DARK SPOT DEFECTS IN INP/INGAASP LIGHT-EMITTING-DIODES
CHIN, AK
ZIPFEL, CL
MAHAJAN, S
ERMANIS, F
DIGIUSEPPE, MA
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (06) : 555 - 557
[3] CHU SC, UNPUB
[4] CHU SNG, 1984, J ELECTROCHEM SOC, V131, P2663, DOI 10.1149/1.2115378
[5] GALLIUM CONTAMINATION OF INP EPITAXIAL LAYERS IN INP/INGAASP MULTILAYER STRUCTURES GROWN BY HYDRIDE TRANSPORT VAPOR-PHASE EPITAXY
CHU, SNG
STEVIE, FA
MACRANDER, AT
KARLICEK, RF
CHANG, CC
JODLAUK, CM
STREGE, KE
MITCHAM, DL
JOHNSTON, WD
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (05) : 1187 - 1193
[6] COX HM, 1983, I PHYS C SER, V65, P133
[7] JOHNSTON WD, 1980, 38TH IEEE DEV RES B, V4
[8] MECHANISM OF OPTICALLY INDUCED DEGRADATION IN INP-IN1-XGAXASYP1-Y HETEROSTRUCTURES
MAHAJAN, S
JOHNSTON, WD
POLLACK, MA
NAHORY, RE
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (10) : 717 - 719
[9] NAKAHARA S, IN PRESS
[10] INTERFACIAL LATTICE MISMATCH EFFECTS IN III-V COMPOUNDS
OLSEN, GH
[J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 223 - 239