CATHODOLUMINESCENCE EVALUATION OF DARK SPOT DEFECTS IN INP/INGAASP LIGHT-EMITTING-DIODES

被引：24

作者：

CHIN, AK

ZIPFEL, CL

MAHAJAN, S

ERMANIS, F

DIGIUSEPPE, MA

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 06期

关键词：

D O I：

10.1063/1.93602

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：555 / 557

页数：3

共 14 条

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[4]

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[10] TRANSMISSION ELECTRON-MICROSCOPE OBSERVATION OF DARK-SPOT DEFECTS IN INGAASP-INP DOUBLE-HETEROSTRUCTURE LIGHT-EMITTING-DIODES AGED AT HIGH-TEMPERATURE [J].

UEDA, O ;

YAMAKOSHI, S ;

KOMIYA, S ;

AKITA, K ;

YAMAOKA, T .

APPLIED PHYSICS LETTERS, 1980, 36 (04) :300-301

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