LATTICE DEFECT STRUCTURE OF DEGRADED INGAASP-INP DOUBLE-HETEROSTRUCTURE LASERS

被引：33

作者：

ISHIDA, K ^{[1
]}

KAMEJIMA, T ^{[1
]}

MATSUMOTO, Y ^{[1
]}

ENDO, K ^{[1
]}

机构：

[1] NIPPON ELECT CO LTD,OPT ELECTR RES LABS,KAWASAKI 211,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 01期

关键词：

D O I：

10.1063/1.92917

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：16 / 17

页数：2

共 16 条

[1] DEGRADATION OF CW GAAS DOUBLE-HETEROJUNCTION LASERS AT 300-K
DELOACH, BC
HAKKI, BW
HARTMAN, RL
DASARO, LA
[J]. PROCEEDINGS OF THE IEEE, 1973, 61 (07) : 1042 - 1044
[2] ENDO K, UNPUB
[3] DEFECT STRUCTURE OF DEGRADED HETEROJUNCTION GAALAS-GAAS LASERS
HUTCHINSON, PW
DOBSON, PS
OHARA, S
NEWMAN, DH
[J]. APPLIED PHYSICS LETTERS, 1975, 26 (05) : 250 - 252
[4] ACCELERATED AGING TEST OF INGAASP-INP DOUBLE-HETEROSTRUCTURE LASER-DIODES WITH SINGLE TRANSVERSE-MODE
IMAI, H
MORIMOTO, M
ISHIKAWA, H
HORI, K
TAKUSAGAWA, M
WAKITA, K
FUKUDA, M
IWANE, G
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (01) : 16 - 17
[5] DEGRADATIONS OF OPTICALLY-PUMPED GAALAS DOUBLE HETEROSTRUCTURES AT ELEVATED-TEMPERATURES
IMAI, H
FUJIWARA, T
SEGI, K
TAKUSAGAWA, M
TAKANASHI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (03) : 589 - 595
[6] NATURE OF (110) DARK-LINE DEFECTS IN DEGRADED (GAAL)AS-GAAS DOUBLE-HETEROSTRUCTURE LASERS
ISHIDA, K
KAMEJIMA, T
MATSUI, J
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (06) : 397 - 399
[7] TEM STUDY OF DARK LINE DEFECT GROWTH FROM DISLOCATION CLUSTERS IN (GAA1)AS-GAAS DOUBLE HETEROSTRUCTURE LASERS
ISHIDA, K
KAMEJIMA, T
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (01) : 57 - 73
[8] Ishida K., UNPUB
[9] OBSERVATION OF RECOMBINATION-ENHANCED DEFECT REACTIONS IN SEMICONDUCTORS
LANG, DV
KIMERLING, LC
[J]. PHYSICAL REVIEW LETTERS, 1974, 33 (08) : 489 - 492
[10] MECHANISM OF OPTICALLY INDUCED DEGRADATION IN INP-IN1-XGAXASYP1-Y HETEROSTRUCTURES
MAHAJAN, S
JOHNSTON, WD
POLLACK, MA
NAHORY, RE
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (10) : 717 - 719

← 1 2 →