TEM STUDY OF DARK LINE DEFECT GROWTH FROM DISLOCATION CLUSTERS IN (GAA1)AS-GAAS DOUBLE HETEROSTRUCTURE LASERS

被引：24

作者：

ISHIDA, K

KAMEJIMA, T

机构：

[1] Central Research Laboratories, Nippon Electric Company, Ltd., Kawasaki

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1979年 / 8卷 / 01期

关键词：

(GaAl)As-GaAs lasers; dark line defects; dark spot defects; dislocation clusters;

D O I：

10.1007/BF02655641

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Dark spot defects in (GaAl)As-GaAs double heterostructure lasers are studied by transmission electron microscopy and found to be a cluster of dislocations generated in the first (GaAl)As epitaxial layer during epitaxial growth. Burgers vectors and spatial configuration of dislocation dipoles developing from these dislocations are determined. It is found that Burgers vectors of dislocations in the dislocation cluster obey the Burgers vector sum rule. © 1979 AIME.

引用

页码：57 / 73

页数：17

共 17 条

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ISHIDA, K
KAMEJIMA, T
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KAMEJIMA, T
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (02) : 233 - 240
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CHINONE, N
NAKASHIMA, H
ITO, R
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KISHINO, S
NAKASHIMA, H
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NAKADA, O
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (04) : 207 - 209
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