INJECTION-ENHANCED DISLOCATION GLIDE UNDER UNIAXIAL STRESS IN GAAS-(GAAL)AS DOUBLE HETEROSTRUCTURE LASER

被引:75
作者
KAMEJIMA, T [1 ]
ISHIDA, K [1 ]
MATSUI, J [1 ]
机构
[1] NIPPON ELECT CO LTD,CENT RES LABS,TAKATSU KU,KAWASAKI,JAPAN
关键词
D O I
10.1143/JJAP.16.233
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:233 / 240
页数:8
相关论文
共 19 条
[1]   ELECTRON-HOLE PAIR CREATION IN GALLIUM PHOSPHIDE BY ALPHA PARTICLES [J].
GOLDSTEI.B .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3853-&
[2]   STRAIN-INDUCED DEGRADATION OF GAAS INJECTION LASERS [J].
HARTMAN, RL ;
HARTMAN, AR .
APPLIED PHYSICS LETTERS, 1973, 23 (03) :147-149
[3]   DEFECT STRUCTURE OF DEGRADED GAALAS-GAAS DOUBLE HETEROJUNCTION LASERS [J].
HUTCHINSON, PW ;
DOBSON, PS .
PHILOSOPHICAL MAGAZINE, 1975, 32 (04) :745-754
[4]  
ISHIDA K, TO BE PUBLISHED
[5]   GROWTH OF DARK LINES FROM CRYSTAL DEFECTS IN GAAS-GAALAS DOUBLE HETEROSTRUCTURE CRYSTALS [J].
ITO, R ;
NAKASHIMA, H ;
NAKADA, O .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (08) :1321-1322
[6]   OBSERVATION OF DARK LINE DEFECTS IN GAP GREEN LEDS UNDER AN EXTERNAL UNIAXIAL STRESS [J].
IWAMOTO, M ;
KASAMI, A .
APPLIED PHYSICS LETTERS, 1976, 28 (10) :591-592
[7]   INJECTION-STIMULATED DISLOCATION-MOTION IN SEMICONDUCTORS [J].
KIMERLING, LC ;
PETROFF, P ;
LEAMY, HJ .
APPLIED PHYSICS LETTERS, 1976, 28 (06) :297-300
[8]   X-RAY TOPOGRAPHIC OBSERVATION OF DARK-LINE DEFECTS IN GAAS-GA1-XALXAS DOUBLE-HETEROSTRUCTURE WAFERS [J].
KISHINO, S ;
NAKASHIMA, H ;
CHINONE, N ;
ITO, R .
APPLIED PHYSICS LETTERS, 1976, 28 (02) :98-100
[9]   DEFORMATION OF SINGLE-CRYSTALS OF GALLIUM-ARSENIDE [J].
LAISTER, D ;
JENKINS, GM .
JOURNAL OF MATERIALS SCIENCE, 1973, 8 (09) :1218-1232
[10]  
LANG DV, 1974, PHYS REV LETT, V33