INJECTION-STIMULATED DISLOCATION-MOTION IN SEMICONDUCTORS

被引：49

作者：

KIMERLING, LC ^{[1
]}

PETROFF, P ^{[1
]}

LEAMY, HJ ^{[1
]}

机构：

[1] BELL TEL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1976年 / 28卷 / 06期

关键词：

D O I：

10.1063/1.88760

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：297 / 300

页数：4

相关论文

共 11 条

[1] DEGRADATION AND PASSIVATION OF GAP LIGHT-EMITTING DIODES
HARTMAN, RL
SCHWARTZ, B
KUHN, M
[J]. APPLIED PHYSICS LETTERS, 1971, 18 (07) : 304 - &
[2] KIMERLING LC, 1974, LATTICE DEFECTS SEMI, P589
[3] PHYSICAL BASIS OF NONCATASTROPHIC DEGRADATION IN GAAS INJECTION LASERS
KRESSEL, H
BYER, NE
[J]. PROCEEDINGS OF THE IEEE, 1969, 57 (01) : 25 - &
[4] OBSERVATION OF RECOMBINATION-ENHANCED DEFECT REACTIONS IN SEMICONDUCTORS
LANG, DV
KIMERLING, LC
[J]. PHYSICAL REVIEW LETTERS, 1974, 33 (08) : 489 - 492
[5] LANG DV, 1974, LATTICE DEFECTS SEMI, P581
[6] LEAMY HJ, UNPUBLISHED
[7] NATURE OF OPTICALLY INDUCED DEFECTS IN GA1-XALXAS-GAAS DOUBLE-HETEROJUNCTION LASER STRUCTURES
PETROFF, P
JOHNSTON, WD
HARTMAN, RL
[J]. APPLIED PHYSICS LETTERS, 1974, 25 (04) : 226 - 228
[8] RAPID DEGRADATION PHENOMENON IN HETEROJUNCTION GAALAS-GAAS LASERS
PETROFF, P
HARTMAN, RL
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (09) : 3899 - 3903
[9] PETROFF PM, UNPUBLISHED
[10] STEINER SA, 1968, SOLID STATE ELECTRON, V2, P65