OBSERVATION OF RECOMBINATION-ENHANCED DEFECT REACTIONS IN SEMICONDUCTORS

被引：297

作者：

LANG, DV ^{[1
]}

KIMERLING, LC ^{[1
]}

机构：

[1] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA

来源：

PHYSICAL REVIEW LETTERS | 1974年 / 33卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.33.489

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：489 / 492

页数：4

相关论文

共 16 条

[1] EFFECTS OF CO-60 GAMMA IRRADIATION ON EPITAXIAL GAAS LASER DIODES
BARNES, CE
[J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (12): : 4735 - +
[2] NEW MECHANISM FOR INTERSTITIAL MIGRATION
BOURGOIN, JC
CORBETT, JW
[J]. PHYSICS LETTERS A, 1972, A 38 (02) : 135 - &
[3] INJECTION-STIMULATED VACANCY REORDERING IN P-TYPE SILICON AT 76DEGREESK
GREGORY, BL
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3765 - &
[4] DEGRADATION AND PASSIVATION OF GAP LIGHT-EMITTING DIODES
HARTMAN, RL
SCHWARTZ, B
KUHN, M
[J]. APPLIED PHYSICS LETTERS, 1971, 18 (07) : 304 - &
[5] ANNEALING OF ELECTRON-IRRADIATED N-TYPE SILICON .1. DONOR CONCENTRATION DEPENDENCE
KIMERLING, LC
DEANGELIS, HM
CARNES, CP
[J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (02): : 427 - +
[6] KIMERLING LC, 1974, B AM PHYS SOC, V19, P210
[7] ANNEALING OF ELECTRON-IRRADIATED N-TYPE SILICON - ILLUMINATION AND FLUENCE DEPENDENCE
KIMERLING, LC
CARNES, CP
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (09) : 3548 - +
[8] KIMERLING LC, UNPUBLISHED
[9] PHYSICAL BASIS OF NONCATASTROPHIC DEGRADATION IN GAAS INJECTION LASERS
KRESSEL, H
BYER, NE
[J]. PROCEEDINGS OF THE IEEE, 1969, 57 (01) : 25 - &
[10] LANG DV, 1974, B AM PHYS SOC, V19, P298