X-RAY TOPOGRAPHIC STUDY OF DARK-SPOT DEFECTS IN GAAS-GA1-XALXAS DOUBLE-HETEROSTRUCTURE WAFERS

被引：24

作者：

KISHINO, S ^{[1
]}

NAKASHIMA, H ^{[1
]}

ITO, R ^{[1
]}

NAKADA, O ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI 185,TOKYO,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1975年 / 27卷 / 04期

关键词：

D O I：

10.1063/1.88430

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：207 / 209

页数：3

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[5] ITO R, TO BE PUBLISHED
[6] DEFECT STRUCTURE INTRODUCED DURING OPERATION OF HETEROJUNCTION GAAS LASERS
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[7] INTERFACE STRESS OF ALXGA1-XAS-GAAS LAYER STRUCTURES
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[8] ELIMINATION OF DISLOCATIONS IN HETEROEPITAXIAL LAYERS BY CONTROLLED INTRODUCTION OF INTERFACIAL MISFIT DISLOCATIONS
ROZGONYI, GA
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